schottky barrier rectifiers 08/22 /2007 rev.1.00 www.siliconstandard.com 1 product summary 1.0 amp. surface mount features for surface mounted application low-profile package ideal for automated pick & place low power loss, high efficiency high current capability, low vf high surge current capability plastic material used carriers underwriters laboratory classification 94v- 0 epitaxial construction high temperature soldering: 260 o c / 10 seconds at terminals mechanical data cases: sub sma plastic case terminal : pure tin plated, lead free. polarity: color band denotes cathode end packaging: 12mm tape per eia std rs-481 weight approx. 15mg dimensions in inches and (millimeters) sub sma pb-free; rohs-compliant ss12l thru ss115l
08/22 /2007 rev.1.00 www.siliconstandard.com 2 maximum ratings and electrical characteristics rating at 25 o c ambient temperature unle ss otherwise specified. single phase, half wave, 60 hz, resistive or inductive load. for capacitive load, de-rate current by 20% type number symbol ss 12l ss 13l ss 14l ss 15l ss 16l ss 19l ss 110l ss 115l units ma x i m u m r ecur r e nt p eak r ever se v olt age v rrm 20 30 40 50 60 90 100 150 v ma x i m u m r m s v o l t age v rms 14 21 28 35 42 63 70 105 v ma x i m u m d c b l oc k i ng v o l t age v dc 20 30 40 50 60 90 100 150 v mark i n g c o de (n ot e 2 ) 12ly m 13ly m 14ly m 15ly m 16ly m 19ly m 10ly m a 5ly m ma x i m u m a v e r age fo rw ard r e c t i f i ed cu r r e n t i ( av) 1. 0 a p e ak forw a rd s u r ge c u r re n t , 8. 3 m s s i n g l e h a l f s i ne-w a v e s uper i m po s ed o n r a t ed lo ad (j e d e c m e thod ) i fsm 30 a ma x i m u m ins t a nt a n e o us f orw ar d v o l t age ( n o t e 1 ) @ 0 . 5 a @ 1 . 0 a v f 0. 385 0.45 0.43 0.50 0. 51 0. 55 0.58 0.70 0. 65 0. 80 0.75 0.90 v 0. 4 0. 05 ma x i m u m d c r e v e r s e c u rre n t @ t a =2 5 o c at r at ed d c b l oc k i n g vo l t a g e @ t a =10 0 o c i r 8. 0 6 . 0 0. 5 ma ma m a x i m u m th er ma l r es i s t an c e ( n o t e 3) r j a r j l 100 45 o c/ w operat i ng tem pe rat ure r a nge t j -55 t o +150 o c s t orage tem perat ure r a nge t st g -55 t o + 150 o c n o t e s : 1. p u l s e te s t w i t h p w =300 us ec , 1% d u t y c y c l e . 2. 12l y m : 1-1a , 2 - 20v , l - low p r of i l e, y - y ear c o de, m-m o nt h c o d e . 3. mea s ured o n p . c . b oar d w i t h 0. 2? x 0. 2? ( 5 . 0 m m x 5. 0 m m ) c o pper p ad a rea s . ss12l thru ss115l
ss12l thru ss115l 0 8/ 22 /2007 rev.1.00 www.siliconstandard.com 3 information furnished by silicon standard corporation is believed to be accurate and reliable. however, silicon standard corporation makes no guarantee or warranty, expressed or implied, as to the reliability, accuracy, timeliness or completeness of such information and assumes no responsibility for its use, or for infringement of any patent or other intellectual property rights of third parties that may result from its use. silicon standard reserves the right to make changes as it deems necessary to any products described herein for any reason, including without limitation enhancement in reliability, functionality or design. no license is granted, whether expressly or by implication, in relation to the use of any products described herein or to the use of any information provided herein, under any patent or other intellectual property rights of silicon standard corporation or any third parties. fig.2- maximum non-repetitive for w ard surge current peak for w ard surge current . (a) 100 50 20 10 5 2 1 number of cycles a t 60hz 1 2 5 10 20 50 100 fig.3- typical for w ard characteristics junction cap acit ance. (pf) 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 for w ard vol t age. (v) fig.1- maximum for w ard current dera ting cur ve a verage for w ard current . (a) 0 20 40 60 80 100 120 140 160 1.2 1.0 0.8 0.6 0.4 0.2 0 lead tempera ture. ( c) o 100 50 20 10 5 2 1 0.5 0.2 0.1 0.05 0.02 0.01 fig.5- typical junction cap acit ance t = 100 c o j t= 7 5 c j o t= 25 c j o 100 50 20 10 5 2 1 0.1 1.0 10 100 1000 tj=25 c f=1.0mhz vsig=50mvp-p o fig.4- typical reverse characteristics 10,000 1,000 100 10 1 0.1 0 20 40 60 80 100 120 140 reverse vol t age. (v) percent of ra ted peak reverse vol t age. (%) 8.3ms single half sine w ave tj=tj max inst ant aneous for w ard current . (a) inst ant aneous current .( a ) reverse ss13l-ss14l ss12l ss19l-ss1 10l fig.6- typical transient thermal characteristics transient thermal impedance. ( c/w) o 1 0.01 0.1 10 100 100 10 1 0.1 t , pulse dura tion. (sec) SS15L-ss16l ss1 15l ratings and characteristic curves
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